STN1N20
- Description：
- MOSFET N-CH 200V 1A SOT223
- Manufacturer：
- STMicroelectronics
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- MESH OVERLAY™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 1A (Tc)
- Rds On (Max) @ Id, Vgs
- 1.5 Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 15.7nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 206pF @ 25V
- Power - Max
- 2.9W
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Supplier Device Package
- SOT-223
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