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PHD38N02LT,118

Description:
MOSFET N-CH 20V 44.7A DPAK
Manufacturer:
NXP Semiconductors
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PHD38N02LT,118

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
44.7A (Ta)
Rds On (Max) @ Id, Vgs
16 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) @ Vgs
15.1nC @ 5V
Input Capacitance (Ciss) @ Vds
800pF @ 20V
Power - Max
57.6W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK

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