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SISS27DN-T1-GE3

Description:
MOSFET P-CH 30V PPAK 1212-8S
Manufacturer:
Vishay Siliconix
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SISS27DN-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs
5.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) @ Vgs
140nC @ 10V
Input Capacitance (Ciss) @ Vds
5250pF @ 15V
Power - Max
4.8W
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PowerPAK® 1212-8S

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