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SIS415DNT-T1-GE3

Description:
MOSFET P CH 20V22.6A 1212-8
Manufacturer:
Vishay Siliconix
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SIS415DNT-T1-GE3

Product Information

Category
FETs - Single
Packaging
Digi-Reel®
Series
TrenchFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
22.6A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs
4 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) @ Vgs
180nC @ 10V
Input Capacitance (Ciss) @ Vds
5460pF @ 10V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Supplier Device Package
PowerPAK® 1212-8

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