SISA18DN-T1-GE3
- Description：
- MOSFET N-CH D-S 30V 1212-8
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- TrenchFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 15.3A (Ta), 38.3A (Tc)
- Rds On (Max) @ Id, Vgs
- 7.5 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id
- 2.4V @ 250µA
- Gate Charge (Qg) @ Vgs
- 21.5nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 1000pF @ 15V
- Power - Max
- 19.8W
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8
- Supplier Device Package
- PowerPAK® 1212-8
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