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SI8851EDB-T2-E1

Description:
MOSFET P-CH 20V MICRO FOOT 2.4X2
Manufacturer:
Vishay Siliconix
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SI8851EDB-T2-E1

Product Information

Category
FETs - Single
Packaging
*
Series
TrenchFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
7.7A (Ta)
Rds On (Max) @ Id, Vgs
8 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) @ Vgs
180nC @ 8V
Input Capacitance (Ciss) @ Vds
6900pF @ 10V
Power - Max
660mW
Mounting Type
*
Package / Case
*
Supplier Device Package
*

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