SI2329DS-T1-GE3
- Description：
- MOSFET P-CH 8V SOT-23
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- TrenchFET®
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 8V
- Current - Continuous Drain (Id) @ 25°C
- 5.3A (Ta)
- Rds On (Max) @ Id, Vgs
- 30 mOhm @ 5.3A, 4.5V
- Vgs(th) (Max) @ Id
- 800mV @ 250µA
- Gate Charge (Qg) @ Vgs
- 29nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 1485pF @ 4V
- Power - Max
- 1.25W
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- SOT-23-3 (TO-236)
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