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SI8469DB-T2-E1

Description:
MOSFET P-CH 8V 3.6A MICRO
Manufacturer:
Vishay Siliconix
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SI8469DB-T2-E1

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
8V
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta)
Rds On (Max) @ Id, Vgs
64 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA
Gate Charge (Qg) @ Vgs
17nC @ 4.5V
Input Capacitance (Ciss) @ Vds
900pF @ 4V
Power - Max
780mW
Mounting Type
Surface Mount
Package / Case
6-UFBGA
Supplier Device Package
6-Micro Foot™

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