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DMN2600UFB-7

Description:
MOSFET N-CH DFN1006-3
Manufacturer:
Diodes Incorporated
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DMN2600UFB-7

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
1.3A (Ta)
Rds On (Max) @ Id, Vgs
350 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) @ Vgs
0.85nC @ 4.5V
Input Capacitance (Ciss) @ Vds
70.13pF @ 15V
Power - Max
540mW
Mounting Type
Surface Mount
Package / Case
3-UFDFN
Supplier Device Package
3-DFN1006 (1.0x0.6)

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