HTNFET-D
- Description：
- MOSFET N-CHANNEL 55V 8-DIP
- Manufacturer：
- Honeywell Microelectronics & Precision Sensors
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Product Information
- Category
- FETs - Single
- Packaging
- Bulk
- Series
- HTMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 55V
- Current - Continuous Drain (Id) @ 25°C
- -
- Rds On (Max) @ Id, Vgs
- 400 mOhm @ 100mA, 5V
- Vgs(th) (Max) @ Id
- 2.4V @ 100µA
- Gate Charge (Qg) @ Vgs
- 4.3nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 290pF @ 28V
- Power - Max
- 50W
- Mounting Type
- Through Hole
- Package / Case
- 8-CDIP Exposed Pad
- Supplier Device Package
- 8-CDIP-EP
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