IXTZ550N055T2
- Description：
- MOSFET N-CH 55V 550A DE475
- Manufacturer：
- IXYS
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- TrenchT2™ GigaMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 55V
- Current - Continuous Drain (Id) @ 25°C
- 550A (Tc)
- Rds On (Max) @ Id, Vgs
- 1 mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) @ Vgs
- 595nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 40000pF @ 25V
- Power - Max
- 600W
- Mounting Type
- Surface Mount
- Package / Case
- DE475
- Supplier Device Package
- DE475
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