BUK9E1R6-30E,127
- Description：
- MOSFET N-CH 30V 120A I2PAK
- Manufacturer：
- NXP Semiconductors
- Buy BUK9E1R6-30E,127 at Hotenda Tech . Hotenda Tech has the largest selection of electronic components, parts and suppliers . All products details and free PDF download of BUK9E1R6-30E,127 can be provided at http://www.hotenda.com/product-tags/BUK9E1R6-30E%2C127.html
Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- TrenchMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 120A (Ta)
- Rds On (Max) @ Id, Vgs
- 1.4 mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id
- 2.1V @ 1mA
- Gate Charge (Qg) @ Vgs
- 113nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 16150pF @ 25V
- Power - Max
- 349W
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package
- I2PAK
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