TK10A60W,S4VX
- Description：
- MOSFET N-CH 600V 9.7A TO-220SIS
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Super Junction
- Drain to Source Voltage (Vdss)
- 600V
- Current - Continuous Drain (Id) @ 25°C
- 9.7A (Ta)
- Rds On (Max) @ Id, Vgs
- 380 mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id
- 3.7V @ 500µA
- Gate Charge (Qg) @ Vgs
- 20nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 700pF @ 300V
- Power - Max
- 30W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Supplier Device Package
- TO-220SIS
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