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IPI65R660CFD

Description:
MOSFET N-CH 650V 6.0A TO262
Manufacturer:
Infineon Technologies
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IPI65R660CFD

Product Information

Category
FETs - Single
Packaging
Tube
Series
CoolMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
660 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 200µA
Gate Charge (Qg) @ Vgs
22nC @ 10V
Input Capacitance (Ciss) @ Vds
615pF @ 100V
Power - Max
62.5W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
PG-TO262-3

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