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BUK9E15-60E,127

Description:
MOSFET N-CH 60V 54A I2PAK
Manufacturer:
NXP Semiconductors
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BUK9E15-60E,127

Product Information

Category
FETs - Single
Packaging
Tube
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
54A (Ta)
Rds On (Max) @ Id, Vgs
13 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Gate Charge (Qg) @ Vgs
20.5nC @ 5V
Input Capacitance (Ciss) @ Vds
2651pF @ 25V
Power - Max
96W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
I2PAK

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