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PSMN1R6-30PL,127

Description:
MOSFET N-CH 30V 100A TO220AB
Manufacturer:
NXP Semiconductors
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PSMN1R6-30PL,127

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Rds On (Max) @ Id, Vgs
1.7 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.15V @ 1mA
Gate Charge (Qg) @ Vgs
212nC @ 10V
Input Capacitance (Ciss) @ Vds
12493pF @ 12V
Power - Max
306W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB

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