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2SK2917(F)

Description:
MOSFET N-CH 500V 18A TO-3PN
Manufacturer:
Toshiba Semiconductor and Storage
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2SK2917(F)

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25°C
18A (Ta)
Rds On (Max) @ Id, Vgs
270 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
80nC @ 10V
Input Capacitance (Ciss) @ Vds
3720pF @ 10V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P(N)IS

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