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BUK6E3R4-40C,127

Description:
MOSFET N-CH TRENCH I2PAK
Manufacturer:
NXP Semiconductors
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BUK6E3R4-40C,127

Product Information

Category
FETs - Single
Packaging
Tube
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
100A
Rds On (Max) @ Id, Vgs
3.6 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) @ Vgs
125nC @ 10V
Input Capacitance (Ciss) @ Vds
8020pF @ 25V
Power - Max
204W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
I2PAK

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