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2SK3313(Q)

Description:
MOSFET N-CH 500V 12A TO220NIS
Manufacturer:
Toshiba Semiconductor and Storage
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2SK3313(Q)

Product Information

Category
FETs - Single
Packaging
Bulk
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Rds On (Max) @ Id, Vgs
620 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
45nC @ 10V
Input Capacitance (Ciss) @ Vds
2040pF @ 10V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS

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