2SK1119(F)
- Description：
- MOSFET N-CH 1000V 4A TO-220AB
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C
- 4A (Ta)
- Rds On (Max) @ Id, Vgs
- 3.8 Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 1mA
- Gate Charge (Qg) @ Vgs
- 60nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 700pF @ 25V
- Power - Max
- 100W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220AB
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