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FETs - Single
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FQB4N80TM
FQB4N80TM
Description:
MOSFET N-CH 800V 3.9A D2PAK
Manufacturer:
Fairchild Semiconductor
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FQB4N80TM
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FQB4N80TM
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Product Information
Category
FETs - Single
Packaging
Cut Tape (CT)
Series
QFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25°C
3.9A
Rds On (Max) @ Id, Vgs
3.6 Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) @ Vgs
25nC @ 10V
Input Capacitance (Ciss) @ Vds
880pF @ 25V
Power - Max
3.13W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263-2
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