IXTY1R4N120P
- Description：
- MOSFET N-CH 1200V 1.4A TO-252
- Manufacturer：
- IXYS
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 1.4A (Tc)
- Rds On (Max) @ Id, Vgs
- -
- Vgs(th) (Max) @ Id
- 4.5V @ 100µA
- Gate Charge (Qg) @ Vgs
- -
- Input Capacitance (Ciss) @ Vds
- -
- Power - Max
- -
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- TO-252, (D-Pak)
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