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TK32E12N1,S1X

Description:
MOSFET N CH 120V 60A TO-220
Manufacturer:
Toshiba Semiconductor and Storage
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TK32E12N1,S1X

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
120V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Rds On (Max) @ Id, Vgs
13.8 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 500µA
Gate Charge (Qg) @ Vgs
34nC @ 10V
Input Capacitance (Ciss) @ Vds
2000pF @ 60V
Power - Max
98W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220

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