2SK2777(SM,Q)
- Description：
- MOSFET N-CH 600V 6A TO220SM
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Bulk
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 600V
- Current - Continuous Drain (Id) @ 25°C
- 6A (Ta)
- Rds On (Max) @ Id, Vgs
- 1.25 Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Gate Charge (Qg) @ Vgs
- 30nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 1300pF @ 10V
- Power - Max
- 65W
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- TO-220SM
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