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IXTA1R4N100P

Description:
MOSFET N-CH 1000V 1.4A TO-263
Manufacturer:
IXYS
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IXTA1R4N100P

Product Information

Category
FETs - Single
Packaging
Tube
Series
Polar™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
1000V (1kV)
Current - Continuous Drain (Id) @ 25°C
1.4A (Tc)
Rds On (Max) @ Id, Vgs
11 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) @ Vgs
17.8nC @ 10V
Input Capacitance (Ciss) @ Vds
450pF @ 25V
Power - Max
63W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263 (IXTA)

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