2SK3798(Q,M)
- Description：
- MOSFET N-CH 900V 4A TO220SIS
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Bulk
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 900V
- Current - Continuous Drain (Id) @ 25°C
- 4A (Ta)
- Rds On (Max) @ Id, Vgs
- 3.5 Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Gate Charge (Qg) @ Vgs
- 26nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 800pF @ 25V
- Power - Max
- 40W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Supplier Device Package
- TO-220SIS
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