IXTY1R4N100P
- Description：
- MOSFET N-CH 1000V 1.4A TO-252
- Manufacturer：
- IXYS
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- Polar™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C
- 1.4A (Tc)
- Rds On (Max) @ Id, Vgs
- 11 Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id
- 4.5V @ 50µA
- Gate Charge (Qg) @ Vgs
- 17.8nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 450pF @ 25V
- Power - Max
- 63W
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- TO-252, (D-Pak)
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