IXTP1R6N100D2
- Description：
- MOSFET N-CH 1000V 1.6A TO220AB
- Manufacturer：
- IXYS
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Depletion Mode
- Drain to Source Voltage (Vdss)
- 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C
- 1.6A (Tc)
- Rds On (Max) @ Id, Vgs
- 10 Ohm @ 800mA, 0V
- Vgs(th) (Max) @ Id
- -
- Gate Charge (Qg) @ Vgs
- 27nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 645pF @ 25V
- Power - Max
- 100W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220AB
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