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IRF640NLPBF

Description:
MOSFET N-CH 200V 18A TO-262
Manufacturer:
International Rectifier
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IRF640NLPBF

Product Information

Category
FETs - Single
Packaging
Tube
Series
HEXFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Rds On (Max) @ Id, Vgs
150 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
67nC @ 10V
Input Capacitance (Ciss) @ Vds
1160pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
TO-262

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