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TK4A60DB(STA4,Q,M)

Description:
MOSFET N-CH 600V 3.7A TO-220SIS
Manufacturer:
Toshiba Semiconductor and Storage
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TK4A60DB(STA4,Q,M)

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)
Rds On (Max) @ Id, Vgs
2 Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4.4V @ 1mA
Gate Charge (Qg) @ Vgs
11nC @ 10V
Input Capacitance (Ciss) @ Vds
540pF @ 25V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220SIS

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