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2SK2845(TE16L1,Q)

Description:
MOSFET N-CH 900V 1A DP
Manufacturer:
Toshiba Semiconductor and Storage
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2SK2845(TE16L1,Q)

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
900V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Rds On (Max) @ Id, Vgs
9 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
15nC @ 10V
Input Capacitance (Ciss) @ Vds
350pF @ 25V
Power - Max
40W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DP

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