TPC8A06-H(TE12LQM)
- Description：
- MOSFET N-CH SBD 30V 12A 8SOP
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- -
- FET Type
- MOSFET N-Channel, Schottky, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 12A
- Rds On (Max) @ Id, Vgs
- 10.1 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id
- 2.3V @ 1mA
- Gate Charge (Qg) @ Vgs
- 19nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 1800pF @ 10V
- Power - Max
- -
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package
- 8-SOP (5.5x6.0)
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