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IXTY1R6N100D2

Description:
MOSFET N-CH 1000V 1.6A DPAK
Manufacturer:
IXYS
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IXTY1R6N100D2

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Depletion Mode
Drain to Source Voltage (Vdss)
1000V (1kV)
Current - Continuous Drain (Id) @ 25°C
1.6A (Tc)
Rds On (Max) @ Id, Vgs
10 Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) @ Vgs
27nC @ 5V
Input Capacitance (Ciss) @ Vds
645pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252, (D-Pak)

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