TPCF8B01(TE85L,F,M
- Description：
- MOSFET P-CH 20V 2.7A VS-8
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Diode (Isolated)
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 2.7A
- Rds On (Max) @ Id, Vgs
- 110 mOhm @ 1.4A, 4.5V
- Vgs(th) (Max) @ Id
- 1.2V @ 200µA
- Gate Charge (Qg) @ Vgs
- 6nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 470pF @ 10V
- Power - Max
- -
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Supplier Device Package
- VS-8 (2.9x1.9)
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