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SQ2319ES-T1-GE3

Description:
MOSFET P-CH D-S 40V TO-236
Manufacturer:
Vishay Siliconix
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SQ2319ES-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
4.6A (Tc)
Rds On (Max) @ Id, Vgs
75 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
16nC @ 10V
Input Capacitance (Ciss) @ Vds
620pF @ 25V
Power - Max
3W
Mounting Type
*
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)

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