TPC6012(TE85L,F,M)
- Description：
- MOSFET N-CH 20V 6A VS6
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 6A (Ta)
- Rds On (Max) @ Id, Vgs
- 20 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id
- 1.2V @ 200µA
- Gate Charge (Qg) @ Vgs
- 9nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 630pF @ 10V
- Power - Max
- -
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package
- VS-6 (2.9x2.8)
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