CSD25213W10
- Description：
- MOSFET P-CH 20V 1.6A 4DSBGA
- Manufacturer：
- Texas Instruments
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- NexFET™
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 1.6A
- Rds On (Max) @ Id, Vgs
- 47 mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id
- 1.1V @ 250µA
- Gate Charge (Qg) @ Vgs
- 2.9nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 478pF @ 10V
- Power - Max
- 1W
- Mounting Type
- Surface Mount
- Package / Case
- 4-UFBGA, DSBGA
- Supplier Device Package
- 4-DSBGA (1x1)
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