DMN2011UFDE-7
- Description：
- MOSFET N-CH 20V 11.7A SOT323
- Manufacturer：
- Diodes Incorporated
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Product Information
- Category
- FETs - Single
- Packaging
- *
- Series
- *
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 11.7A (Ta)
- Rds On (Max) @ Id, Vgs
- 9.5 mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Gate Charge (Qg) @ Vgs
- 56nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 2248pF @ 10V
- Power - Max
- 610mW
- Mounting Type
- *
- Package / Case
- *
- Supplier Device Package
- *
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