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DMN2011UFDE-7

Description:
MOSFET N-CH 20V 11.7A SOT323
Manufacturer:
Diodes Incorporated
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DMN2011UFDE-7

Product Information

Category
FETs - Single
Packaging
*
Series
*
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
11.7A (Ta)
Rds On (Max) @ Id, Vgs
9.5 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) @ Vgs
56nC @ 10V
Input Capacitance (Ciss) @ Vds
2248pF @ 10V
Power - Max
610mW
Mounting Type
*
Package / Case
*
Supplier Device Package
*

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