RW1C020UNT2R
- Description：
- MOSFET N-CH 20V 2A WEMT6
- Manufacturer：
- Rohm Semiconductor
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 2A
- Rds On (Max) @ Id, Vgs
- 105 mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Gate Charge (Qg) @ Vgs
- 2nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 180pF @ 10V
- Power - Max
- 700mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Supplier Device Package
- 6-WEMT
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