SSM3J112TU(TE85L)
- Description：
- MOSFET P-CH 30V 1.1A UFM
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- -
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 1.1A (Ta)
- Rds On (Max) @ Id, Vgs
- 390 mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id
- 1.8V @ 100µA
- Gate Charge (Qg) @ Vgs
- -
- Input Capacitance (Ciss) @ Vds
- 86pF @ 15V
- Power - Max
- 500mW
- Mounting Type
- Surface Mount
- Package / Case
- 3-SMD, Flat Leads
- Supplier Device Package
- UFM
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