RW1A013ZPT2R
- Description：
- MOSFET P-CH 12V 1.3A WEMT6
- Manufacturer：
- Rohm Semiconductor
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Product Information
- Category
- FETs - Single
- Packaging
- *
- Series
- -
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss)
- 12V
- Current - Continuous Drain (Id) @ 25°C
- 1.5A
- Rds On (Max) @ Id, Vgs
- 260 mOhm @ 1.3A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Gate Charge (Qg) @ Vgs
- 2.4nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 290pF @ 6V
- Power - Max
- 400mW
- Mounting Type
- *
- Package / Case
- *
- Supplier Device Package
- *
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