SCT2120AFC
- Description：
- MOSFET N-CH 650V 29A TO-220AB
- Manufacturer：
- Rohm Semiconductor
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- -
- FET Type
- SiCFET N-Channel, Silicon Carbide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 29A (Tc)
- Rds On (Max) @ Id, Vgs
- 156 mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id
- 4V @ 3.3mA
- Gate Charge (Qg) @ Vgs
- 61nC @ 18V
- Input Capacitance (Ciss) @ Vds
- 1200pF @ 500V
- Power - Max
- 165W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220AB
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