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SCT2120AFC

Description:
MOSFET N-CH 650V 29A TO-220AB
Manufacturer:
Rohm Semiconductor
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SCT2120AFC

Product Information

Category
FETs - Single
Packaging
Tube
Series
-
FET Type
SiCFET N-Channel, Silicon Carbide
FET Feature
Standard
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Rds On (Max) @ Id, Vgs
156 mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
4V @ 3.3mA
Gate Charge (Qg) @ Vgs
61nC @ 18V
Input Capacitance (Ciss) @ Vds
1200pF @ 500V
Power - Max
165W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB

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