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TK10J80E,S1E

Description:
MOSFET N-CH 800V TO-3PN
Manufacturer:
Toshiba Semiconductor and Storage
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TK10J80E,S1E

Product Information

Category
FETs - Single
Packaging
*
Series
*
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Rds On (Max) @ Id, Vgs
1 Ohm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
46nC @ 10V
Input Capacitance (Ciss) @ Vds
2000pF @ 25V
Power - Max
250W
Mounting Type
*
Package / Case
*
Supplier Device Package
*

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