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TK31V60X,LQ

Description:
MOSFET N CH 600V DFN
Manufacturer:
Toshiba Semiconductor and Storage
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TK31V60X,LQ

Product Information

Category
FETs - Single
Packaging
*
Series
*
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Super Junction
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
30.8A (Ta)
Rds On (Max) @ Id, Vgs
98 mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.5mA
Gate Charge (Qg) @ Vgs
65nC @ 10V
Input Capacitance (Ciss) @ Vds
3000pF @ 300V
Power - Max
240W
Mounting Type
*
Package / Case
*
Supplier Device Package
*

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