TK65G10N1,RQ
- Description：
- MOSFET N CH 100V D2PAK
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- *
- Series
- *
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 65A (Ta)
- Rds On (Max) @ Id, Vgs
- 4.5 mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Gate Charge (Qg) @ Vgs
- 81nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 5400pF @ 50V
- Power - Max
- 156W
- Mounting Type
- *
- Package / Case
- *
- Supplier Device Package
- *
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