TK100S04N1L,LQ
- Description：
- MOSFET N CH 40V DPAK
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- *
- Series
- *
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 40V
- Current - Continuous Drain (Id) @ 25°C
- 100A (Ta)
- Rds On (Max) @ Id, Vgs
- 2.3 mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 500µA
- Gate Charge (Qg) @ Vgs
- 76nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 5490pF @ 10V
- Power - Max
- 100W
- Mounting Type
- *
- Package / Case
- *
- Supplier Device Package
- *
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