TK65S04N1L,LQ
- Description：
- MOSFET N CH 40V DPAK
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- *
- Series
- *
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 40V
- Current - Continuous Drain (Id) @ 25°C
- 65A (Ta)
- Rds On (Max) @ Id, Vgs
- 4.3 mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 300µA
- Gate Charge (Qg) @ Vgs
- 39nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 2550pF @ 10V
- Power - Max
- 68W
- Mounting Type
- *
- Package / Case
- *
- Supplier Device Package
- *
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