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TPN1110ENH,L1Q

Description:
MOSFET N CH 200V TSON
Manufacturer:
Toshiba Semiconductor and Storage
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TPN1110ENH,L1Q

Product Information

Category
FETs - Single
Packaging
*
Series
*
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
7.2A (Ta)
Rds On (Max) @ Id, Vgs
114 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id
4V @ 200µA
Gate Charge (Qg) @ Vgs
7nC @ 10V
Input Capacitance (Ciss) @ Vds
600pF @ 100V
Power - Max
39W
Mounting Type
*
Package / Case
*
Supplier Device Package
*

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