TPN1110ENH,L1Q
- Description：
- MOSFET N CH 200V TSON
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- *
- Series
- *
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 7.2A (Ta)
- Rds On (Max) @ Id, Vgs
- 114 mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 200µA
- Gate Charge (Qg) @ Vgs
- 7nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 600pF @ 100V
- Power - Max
- 39W
- Mounting Type
- *
- Package / Case
- *
- Supplier Device Package
- *
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